Abstract
This paper presents FinCACTI, a cache modeling tool based on CACTI which also supports deeply-scaled FinFET devices as well as more robust SRAM cells. In particular, FinFET devices optimized using advanced device simulators for 7nm process serve as the case study of the paper. Based on this 7nm FinFET process, characteristics of 6T and 8T SRAMs are calculated, and comparison results show that under the same stability requirements the 8T cell has smaller area and leakage power. SRAM and technological parameters of the 7nm FinFET are then incorporated into FinCACTI. According to architecture-level simulations, the 8T SRAM is suggested as the choice of memory cell for 7nm FinFET. Moreover, a 4MB cache in 7nm FinFET compared with 22nm (32nm) CMOS under same access latencies achieves 5x (9x) and 11x (24x) reduction in read energy and area, respectively.
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