Abstract
A reduction of the deposition temperature is necessary for atomic layer deposition (ALD) on organic devices. HfO2 films were deposited by ALD on silicon substrates in a wide temperature range from 80 to 300 °C with tetrakis[ethylmethylamino]hafnium as metal precursor and H2O, O3, or an remote O2-plasma as oxygen source. Growth rate and density were correlated to electrical properties like dielectric constant and leakage current of simple capacitor structures to evaluate the impact of different process conditions. Process optimizations were performed to reduce film imperfections visible at lower deposition temperatures. Additionally, the influence of postdeposition annealing on the structural and electrical properties was studied.
Published Version
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