Abstract
AlGaN/GaN high electron mobility transistors (HEMTs) have potential applications in the next generation high-power microwave and switching devices. They can maintain robust device characteristics under high temperature operation and high voltage conditions because of their superior material properties [1]. Sapphire and SiC are popularly used as substrate materials for GaN optoelectronic devices. Recently GaN on Si (111) technology has found applications in electronic devices because of its low cost and superior scalability of wafer size. In this study, 0.5µm gate length GaN on Si HEMT technology was proposed and demonstrated with field-plate technology. This GaN on Si HEMT process realized the high performance microwave and power electronics and circuits successfully.
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