Abstract
The electric transport properties of single-walled carbon nanotubes (SWNT) bundles array have been measured. We report the fabrications and performances of nanoscale field-effect transistors (FET) based on SWNT bundles array. In addition to p-type FET, we present a new technique by which ambipolar FETs can be fabricated. The I/sub on// I/sub off/ ratio of ambipolar FETs approaches 5 orders of magnitude. The reasons for ambipolar character are also qualitatively discussed. Both p-type and ambipolar FETs exhibit hysteresis in their electrical characteristics.
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