Abstract
In this study, a recessed gate wide bandgap III-Nitride (AlN, GaN) nano-HEMT on a lattice matched β-Ga2O3 substrate is proposed. This study aims to enhance DC and RF/microwave performance characteristics of proposed GaN/β-Ga2O3 HEMT while minimizing the influence of short channel and leakage current by using an Al0.12Ga0.88N layer configuration and field-plate mechanism. The analysis focuses on evaluating an impact of AlGaN back layer on HEMT's overall performance. The placement of Al0.12Ga0.88N layer helps to increase a conduction band level that lowers current leakage loss below GaN buffer and facilitates to keep an abundant 2DEG contained to a narrow channel. Additionally, field-plate design allows for better control of electric field distribution under gate region, yielding improved breakdown voltage characteristics. This research aims to contribute the advancement of III-nitride nano-HEMT technology on newly emerging ultra-wide bandgap β-Ga2O3 substrate and pave the way for its widespread adoption in various power and RF/microwave applications.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call