Abstract
AbstractAn analytical modeling of electric field and breakdown voltage characteristics of AlInN/GaN HEMT with field plate at drain and gate regions is presented. In the model development, GaN buffer and Si substrate regions are treated as depletion regions. The developed model gives a deep physical understanding of the electric field and breakdown voltage characteristics of AlInN/GaN HEMT devices. The avalanche breakdown of a device appears in the vertical interface or edges of lateral field-plate structures. The relationship between vertical and lateral breakdown with respect to analytical modeling is presented. The breakdown characteristics are analyzed with device parameters including the thickness of regions, the length of field plate, and the distance between gate and drain. These analytical model characteristics are verified by matching with numerical simulations and are found in good agreement. The developed model can be used as an effective direction for the optimization of the device to accomplish better performance.KeywordsGaNHEMTField plateElectric fieldBreakdown voltage
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