Abstract

A novel 1-D analytical model is proposed for quantifying the surface electric field and breakdown voltage of reduced surface field (RESURF) lateral power devices. The charges in the depletion region is contribute to the lateral PN junctions along a gradual charge appointment line. Based on the assumption, the Lateral PN junction behaves as a graded junction, thus resulting the reduced surface electric field and high breakdown voltage. At last, a new RESURF criterion is derived which offers a useful scheme to optimize the structure parameters. The analytical results show a fair agreement with the numerical results and experiments.

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