Abstract
The breakdown voltage model of Si-substrated AlGaN/GaN HEMTs with gate and drain field plates is proposed in this work. The silicon substrate and GaN buffer are considered as the depletion region in the modeling process. The analytical model shows great simplicity and veracity. It gives physical insights into the breakdown characteristics of the AlGaN/GaN HEMTs. The avalanche breakdown occurs at the field plate’s edge in lateral structure or at the interface in vertical structure. According to the analytical model, the relationship between the lateral breakdown and the vertical breakdown is demonstrated in this work. The breakdown location is affected by the variation of the structure parameters, including gate-to-drain distance, buffer thickness and field plates’ lengths. With the aid of the analytical model, effective guidance for device optimization to achieve high performance can be obtained.
Highlights
Wide-Bandgap material GaN is gaining increasing attention for its attractive performance in high frequency and high power applications arising from its material properties [1]–[4]
The breakdown voltage (BV) model for Si-substrated AlGaN/GaN high electron mobility transistors (HEMTs) with gate and drain field plates (GD-FPs) is proposed in this work, which gives physical insights into BV’s variation with different device structures
The breakdown voltage model of AlGaN/GaN HEMTs with GD-FPs is proposed in this work, which shows good simplicity and accuracy
Summary
Wide-Bandgap material GaN is gaining increasing attention for its attractive performance in high frequency and high power applications arising from its material properties [1]–[4]. LIU et al.: ANALYTICAL STUDY ON BREAKDOWN CHARACTERISTICS OF Si-SUBSTRATED AlGaN/GaN HEMTs fitting of numerical simulations rather than the analytical solution of Poisson equations By this approach, modeling complex device structures are challengeable and simulation results need to be obtained before modeling. As AlGaN/GaN HEMTs’ wide application in high power region, its capacity to undertake high blocking voltage in off-state is a crucial parameter, evaluated as the breakdown voltage (BV) These models can obtain the potential and E-Field distributions at the heterojunction interface. No analytical model with consideration of buffer and substrate layers as depletion region has been proposed to investigate the E-Filed distribution and breakdown characteristics of AlGaN/GaN HEMTs with gate and drain field plates (GD-FPs), which deserves further exploration. The BV model for Si-substrated AlGaN/GaN HEMTs with GD-FPs is proposed in this work, which gives physical insights into BV’s variation with different device structures
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