Abstract
The thermal emission rate of holes, e t p , has been measured from dark leakage currents for the Au acceptor level in silicon diodes at different electric fields and found to be field independent for average electric fields below 10 5V/cm.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
