Field-emission scanning probe lithography tool for 150 mm wafer

Abstract

The development of next nodes of nano-electronic devices requires mask-less techniques for fast prototyping and analysis of ultimately down-scaled devices or for fabrication of templates for nanoimprint based high-volume manufacturing. Moreover, the atomic force microscopy (AFM) of large surfaces with acceptable speed becomes an issue with the introduction of large-sized wafers. The authors have designed an AFM system which is capable of field-emission scanning probe lithography on 150 mm wafers providing superior stitching accuracy better than 3 nm. The system is also providing noncontact, high-resolution 3D imaging employing active probes (i.e., piezoresistive self-sensing and thermo-mechanically self-actuated probes) and capable to operate with an array of four cantilevers. A high-precision X-Y-θ stage with 10 nm positioning accuracy and with 360° rotation capability enables the highest placement precision and cost effective large scanning field imaging.