Abstract
Single-crystalline GeSe2 nanowalls were prepared via a chemical vapor deposition process. Field-emission (FE) properties of as-prepared GeSe2 nanowalls were investigated. The FE properties could be observed in the GeSe2 nanowalls. The electron emission process from GeSe2 nanowalls is a quantum tunneling process, which follows the Fowler–Nordheim behavior. Their turn-on fields and current densities are comparable to those of many other semiconductor nanomaterials. The field enhancement factor for a single GeSe2 nanowall is estimated to be as high as 527 and 1054 with the average spacing between the electrodes is 100 μm and 200 μm, respectively. These results indicate that GeSe2 nanostructures are promising candidates for applications in field emitter.
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