Abstract
This paper proposes a novel floating gate MOSFET (FGMOS) based tunable grounded resistor (FGTGR). The FGTGR has been implemented using a single 3-input FGMOS. In the drain current equation of 3-input FGMOS, the gate voltage is equal to the weighted-sum of the 3 input voltages, namely V in (input voltage), V C (control voltage), and V b (bias voltage). The input gate voltage (V in ) with appropriate conditions has been used to cancel the nonlinear-term present in the drain current equation of FGMOS operating in the ohmic region. The control voltage V C has been used to control the resistor value and the bias voltage V b has been used to realize either a threshold-dependent or a threshold-independent FGTGR. The FGTGR is simple, compact, accurate, and with low power dissipation of 1.63 μW. The workability of the FGTGR and the high pass filter realized by using the same, have been confirmed by SPICE simulations in 0.5 μm CMOS technology.
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