Abstract
The analytical model of random variation in drain current of the Floating Gate MOSFET (FGMOSFET) has been proposed in this research. The model is composed of two parts for triode and saturation region of operation where the process induced device level random variations of each region and their statistical correlations have been taken into account. The nonlinearity of floating gate voltage and dependency on drain voltage of the coupling factors of FGMOSFET have also been considered. The model has been found to be very accurate since it can accurately fit the SPICE BSIM3v3 based reference obtained by using Monte-Carlo SPICE simulation and FGMOSFET simulation technique with SPICE. It can fit the BSIM4 based reference if desired by using the optimally extracted parameters. By using the proposed model, the variability analysis of FGMOSFET and the analytical modeling of the variation in the circuit level parameter of any FGMOSFET based circuit can be performed. So, this model has been found to be an efficient tool for the variability aware analysis and design of FGMOSFET based circuit.
Highlights
FGMOSFETs have been extensively utilized in various analog/digital circuits such as [1,2,3,4,5,6,7,8,9]
Let ki, kfd, kfs, and kfb denote the coupling factor of any ith input gate, drain, source, and bulk and let them be defined as ki = Ci/CT, kfd = capacitance between floating gate and drain (Cfd)/CT, kfs = capacitance between floating gate and source (Cfs)/CT, and kfb = capacitance between floating gate and substrate (Cfb)/CT, respectively; VFG can be alternatively given as follows: Figure 1: A cross-sectional view of N-type N inputs FGMOSFET [2]
Such equivalent circuit is composed of a MOSFET, N input capacitances (C1, C2, C3, . . . , CN), overlap capacitance between floating gate and drain (Cfd), overlap capacitance between floating gate and source (Cfs), and parasitic capacitance between floating gate and substrate (Cfb) [2]
Summary
FGMOSFETs have been extensively utilized in various analog/digital circuits such as [1,2,3,4,5,6,7,8,9]. The analytical models of process induced random variation and mismatch in ID of MOSFET have been proposed without regard to certain circuit in many previous researches, for example, [13,14,15]. Their results are applicable to any MOSFET based circuit. The nonlinearity of floating gate voltage and dependency on drain voltage of the coupling factors of FGMOSFET have been considered This model has been formulated without regard to any circuit. It has been found to be very accurate since it can fit the SPICE BSIM3v3 based reference obtained by using FGMOSFET simulation technique with SPICE [23] and Floating gate
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