Abstract
The alpha power law based model of random variation in drain current of an unconventional MOSFET namely Floating-Gate MOSFET (FGMOSFET) has been proposed where the nanometer level technology has been focused. The process induced device level random variations and their statistical correlations have been taken into account. The model has been found to be very accurate since it can accurately fit the 65 nm SPICE BSIM4 based reference obtained by using Monte-Carlo SPICE. So, it has been found to be efficient for the variability aware analysis and design of FGMOSFET based circuit at nanometer regime.
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