Abstract
We report the room temperature ferromagnetism and a metal–semiconductor transition at 227 K in 200 MeV Ag15+-ion irradiated thin films of Fe-implanted ZnO. The single phase nature of Fe-doped ZnO after ion irradiation is confirmed by x-ray diffraction. Magneto-resistance measurements show spin polarization below 150 K. X-ray absorption spectroscopy and x-ray magnetic circular dichroism studies at room temperature reveal that Fe is oxidized in a mixed valence (Fe2+ and Fe3+) state and the magnetic signal is due to the Fe2+ state. The observations are explained on the basis of the combined effect of carrier doping by Fe3+ and oxygen vacancies.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
