Abstract
Ferroelectric (PbTiO3 or Pb(Zr, Ti)O3) thin films have been successfully prepared on Si(100) or pyrex glasses by backside deposition of intense pulsed ion beam evaporation. The ion beam parameters were typically as follows: beam energy=1.3 MeV, ion-current density on target=0.7 kA/cm2 and pulse duration=50 ns. The composition of the thin films was in good agreement with that of the original target. The relative dielectric constant at 1 kHz was obtained to be 20, while that obtained by normal front side deposition was 150.
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