Abstract
Epitaxial Ba(Zr0.3Ti0.7)O3 thin films were grown by radio frequency magnetron sputtering on (100) MgO substrate. Dielectric measurements at low frequencies (10 Hz–1 MHz) indicate that the material is a ferroelectric relaxor in nature. The temperature dependence of relative permittivity (εr) follows the modified Curie–Weiss law and the frequency dispersion of transition temperature can be described using the Vogel–Fulcher relation. Measured at 100 kHz, the tunability (τ) and figure of merit are comparable to (Ba,Sr)TiO3 thin films. In the microwave frequency region (1–50 GHz), the frequency dependence of permittivity and the loss tan δ (12%–21%) make the Ba(Zr0.3Ti0.7)O3 thin films unfeasible for practical tunable devices.
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