Abstract
The femtosecond dynamics of hot carriers interacting with a cold high density electron-hole plasma are investigated in GaAs and Al0.2Ga0.8As. Studies are performed using a three pulse pump-probe technique where a cold plasma is first generated by a femtosecond pulse, then pump-probe transmission measurements are performed after a few hundred picoseconds delay. The results indicate only a small increase of the hot carrier thermalization rate even for plasma densities as high as 1018 cm−3.
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