Abstract
Up-conversion luminescence and pump-probe spectroscopy are used to determine the energy distribution and recombination kinetics of photoexcited carriers in low-temperature-grown InP. The samples used are two unannealed InP films grown at 200 and 300 °C. The photoexcited carriers undergo fast trapping in less than 1 ps with recombination taking place on a much longer time scale. The carrier trapping time is found to be 500±100 fs for the 200 °C sample and 1.6±0.05 ps for the 300 °C sample and the trap photoionization cross section is estimated to be 10−16 cm2.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
