Abstract
Pump-probe spectroscopy is used to determine the dynamics of carriers in thin films of Ga0.51In0.49P grown at temperatures of 500, 300, and 200 °C. The carrier trapping time τtr, is found to be ∼0.2 ps for the 200 °C sample and ∼0.9 ps for the 300 °C sample. Annealing of the 200 °C sample at 450 °C for 10 min causes the optical response to slow appreciably (τtr∼0.7 ps), indicating that the point defects are directly responsible for the ultrashort optical response observed in this material.
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