Fem simulation on the 3D temperature distribution of large area hot filament chemical vapor deposition system

Abstract

The thermal exchange process in the reactor of the HFCVD system is analyzed at first. Then, the three dimensions finite element analysis (FEA) model of large-area substrate temperature field is built up. The three dimensions FEA model is more close to the actual deposition system compared with the former pure heat radiation model and its results are in good accord with the experimental results. The simulation study is carried out on the temperature distribution of large area HFCVD system based on the three dimensions FEA model. The three dimensions temperature distribution is obtained by the FEA model. The effect of the hot filament diameter, hot filament temperature, the substrate-filament distance and the water cooling parameter on the magnitude and uniformity of substrate temperature field is discussed. Simulation results show that in the range of fitting for the growth of diamond film, the hot filament parameters and contact thermal resistance of the substrate have great influence on the magnitude of the substrate temperature. Because of the effect three dimensions thermal conduction of substrate, the temperature field is more uniform than those in pure heat radiation system and all of the deposition parameters have little effect on the uniformity of the substrate temperature. All the results provide the basis for high quality preparation of diamond film.