Abstract
The formation of thin-film solid solutions of erbium in silicon and synthesis of erbium silicides were performed using continuous implantation of silicon with erbium ions followed by pulsed ion-beam treatment. Structural and optical properties of formed Si:Er layers were studied by Rutherford backscattering, transmission electron microscopy, and low-temperature photoluminescence. The dependences of erbium redistribution, the microstructure of Si:Er layers, and their photoluminescence in the near-IR region on the erbium concentration and pulsed treatment conditions were determined.
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