Abstract
The morphology and optical properties of Si samples implanted by low-energy Fe+ ions with different fluences (1 × 1015–1.8 × 1017 cm−2) and further subjected to pulsed ion-beam treatment (PIBT) have been studied by atomic force microscopy and optical reflectance spectroscopy. It was proved that iron disilicide (β-FeSi2) crystallites were formed on the surface of the Si substrate as a result of ion implantation and PIBT. The method of ultrahigh vacuum and low-temperature (T = 850 °C) cleaning of Fe+-implanted Si samples has been applied for the first time. It was found that it is possible to form smooth epitaxial Si films with both a thickness of up to 1.7 µm and a reconstructed surface by molecular beam epitaxy on the surface of Si samples implanted with a fluence of up to 1 × 1016 cm−2. Further increase in the implantation fluence results in the disruption of epitaxial Si growth and to a strong increase in surface relief roughness due to 3D silicon growth mechanism. Preservation of β-FeSi2 precipitates inside the Si matrix after the formation of a cap epitaxial Si layer has been confirmed by optical spectroscopy data. Low temperature photoluminescence measurements in the range 1400–1700 nm showed that light emission of the formed Si/β-FeSi2/Si heterostructures is due to contributions from β-FeSi2 precipitates and dislocations.
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