Abstract
The surface morphology of silicon substrates and their optical properties have been investigated after ion implantation by three Mg+ fluencies (Φ = 6×1015cm-2, 1×1016cm-2 and 6×1016cm-2) and pulsed ion-beam treatment (PIBT) with three energy densities (W = 0.5, 1.0 and 1.5J/cm2). Magnesium ion implantation into Si(111) substrates at room temperature results in the formation of smooth amorphous silicon layer with thickness of about 0.15 Φm containing amorphous non-stoichiometric magnesium silicide. Subsequent nanosecond PIBT leads to crystallization silicon and synthesis Mg2Si precipitates. The optimum conditions of ion implantation and PIBT leading to silicon crystallization and Mg2Si conservation within the implanted layer are determined (Φ = 6Φ1016cm-2 and W = 0.5-1.0J/cm2).
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