Abstract
Influence of large radiation defects — disordered regions on photoconductivity of semiconductors Ge and Si , compensated as a result of an irradiation with fast neutrons and 1 GeV protons, is investigated. For the first time, the combined role of disordered regions and a large-scale potential relief in photoelectrical properties of Ge and Si , irradiated by high energy particles is defined. The model of photoconductivity that takes into consideration disordered regions as specific sensitizing recombination centers and allows formation of the spatial potential relief is developed.
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