Abstract
A method of cobalt disilicide (CoSi2) layer formation proceeding from a Ti(8 nm)/Co(10 nm)/Ti(5 nm)/Si(100) (substrate) structure prepared by magnetron sputtering is described. The initial structure was subjected to two-stage rapid thermal annealing (RTA) in nitrogen, and the samples after each stage were studied by the time-of-flight secondary-ion mass spectrometry, Auger electron spectroscopy, scanning electron microscopy, and energy-dispersive X-ray spectroscopy. The RTA-1 stage (550°C, 45 s) resulted in the formation of a sacrificial surface layer of TiNxOy, which gettered residual impurities (O, C, N) from inner interfaces of the initial structure. After the chemical removal of this TiNxOy layer, the enrichment with cobalt at the RTA-2 stage (830°C, 25 s) led to the formation of a low-resistance CoSi2 phase.
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