Feasibility of molecular dynamics simulation for process parameter guidance of silicon nitride thin films by PECVD

Abstract

Due to the limitations of the characterization approaches and the relative complex and expensive characteristics of CVD method itself, experimental-based studies are limited, and simulation of SiNx deposition based on molecular dynamics (MD) simulation provides a more convenient and clear solution. In this work, Tersoff potential function containing the interatomic potential for two-body and three-body interactions was utilized to simulate of the deposition process for SiNx thin films by the PECVD. A quick and accurate method basing on Alpha-shapes was proposed to extract surface atoms and the surface roughness of the thin film samples at substrate temperatures of 353, 493, and 653 K were found to be 0.804, 0.794, and 0.721 nm respectively. By analyzing the radial distribution function, it can get that there are small changes in the Si-Si and Si-N bonds at three temperatures. We also found the diffusion phenomenon at the interface, and the atomic diffusion phenomenon at the substrate interface makes the phenomenon of elemental mutation at the interface less rapid. The simulation results confirm that the substrate temperature during deposition has an effect on the adsorption and atomic drift rate of the substrate, which in turn affects the surface morphology of the film.