Abstract
The influence of deposition parameters on VHF-PECVD process and performance of silicon thin films has been investigated. Special emphasis was given to the effect of plasma power and working pressure. From the experimental data it was found that increasing substrate temperature, pressure and/or plasma power resulted in an enhanced deposition rate. Furthermore, we also found a large influence of plasma power on transitional materials from a-Si to μc-Si. The crystalline volume fraction (Xc) had a nonlinear relationship with plasma power. Under given hydrogen dilution Xc decreased at first, and then increased with the increase of plasma power. Using this non-monotonic effect of plasma power with Xc, combined with varying hydrogen dilution, Xc could be optimised expediently. The tendency of Xc with power at different hydrogen dilution was also predicted in this paper. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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