Abstract
Automated interaction of SDevice and HSPICE for fast 3-D electrothermal simulation based on the relaxation method is designed. The results are compared with device finite element model simulation and a direct method with an equivalent thermal 3-D RC network. The features and limitations of the methods are analyzed and presented. The designed electrothermal simulation based on the relaxation method is developed for Synopsys TCAD Sentaurus environment for decreasing the simulation time for complex 3-D devices. A power vertical superjunction MOSFET under an unclamped inductive switching test of device robustness is used to perform validation of the designed electrothermal simulation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
