Abstract
Responsivity measurements have been performed on commercial silicon photodetectors in the UV range 200–400 nm. The microstrip and pixel detectors have been reverse biased in fully depleted condition (more than 25 V reverse bias) and in partially depleted condition (5 V reverse bias). We have also performed measurements in back illumination geometry, of particular interest in most industrial applications. Promising results obtained with commercial photodetectors in the UV range in terms of photocurrent stability and sensitivity open a variety of applications.
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