Abstract
The feasibility of using far-infrared photoconductive magnetospectroscopy to accurately determine the positions of shallow donors in multiple quantum well samples grown by molecular-beam epitaxy has been investigated and the technique successfully applied to silicon donors in quantum wells at doping levels below 2×1016 cm−3. Theoretical spectra calculated using a combined segregation and diffusion model for predicting donor position along with a theory of mapping donor 1s→2p+1 transition energies to magnetic fields are in good agreement with experimental spectra. A new value for the segregation decay rate, 3.1 nm/decade, is indicated for Si donors in wide GaAs/AlGaAs quantum wells grown at a substrate temperature of 680 °C. This new tool which is effective in the doping range of 1×1014 to 2×1016 cm−3 complements capacitance–voltage (C–V) techniques and secondary ion mass spectrometry. The technique is also applicable to a variety of heterostructures.
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