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Abstract
The results of experimental investigations of impurity-assisted photoluminescence at low temperatures from n-GaAs/AlGaAs multiple quantum wells both in near- and far-infrared (terahertz) spectral ranges are presented. The optical electron transitions from impurity ground state to heavy hole subband in near-infrared spectral range are revealed. The depopulation of the donor ground state due to these transitions allowed us to observe photoluminescence in terahertz spectral range related to electron transitions from the first electron subband to donor ground state as well as to intracenter optical transitions. Experimental results in far- and near-infrared spectral ranges are in good agreement with the results on THz photoconductivity and energy spectrum calculation.
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