Fabrication of ZnO-encapsulated porous alumina structure utilizing a two-step anodizing technique for memristor applications

Abstract

Highly ordered porous alumina thin films with various aspect ratios were fabricated by a two-step anodizing technique. The dependence of the high resistance state to low resistance state ratio on the aspect ratio of the pores was observed in the memristors utilizing porous alumina. The reduction of threshold voltage and improvement in stability were achieved by properly encapsulating i-ZnO inside the porous alumina as the switching medium. A significant improvement in the ratio of high resistance state to low resistance state was achieved by i-ZnO encapsulation in porous alumina compared to the conventional planer switching layer of ZnO alone.