Fabrication of wirelike InAs quantum dots on 2°-off GaAs (100) substrates by changing the thickness of the InAs layer

Abstract

Wirelike InAs quatum dots (QDs) grown on 2°-off (100) GaAs substrates by changing the thickness of the InAs layer were successfully fabricated. The sizes of the InAs QDs along the step lines increased with increasing the thickness of the InAs layer, and their increases were attributed to transform of the InAs QDs into the wirelike InAs QDs. The optimal thicknesses of the InAs layers for the wirelike QDs and the interval of the wirelike QDs were significantly affected by the terrace width resulting from the bunching effect due to the thickness variations of the GaAs buffer layers grown on 2°-off (100) GaAs substrates. These results indicate that these wirelike InAs QDs are useful for applications in nanoelectronic devices, such as wrap gate single electron transistors.