Correlation of surface chemistry of GaAs substrates with growth mode and stacking fault density in ZnSe epilayers

Abstract

We report on the correlation of surface chemistry of GaAs substrates with growth mode and stacking fault density in ZnSe epilayers. High quality ZnSe epilayers with low stacking fault density have been directly grown on commercial epiready GaAs (001) substrates without GaAs buffer layer growth. It is found that proper pregrowth treatments of epiready GaAs (001) substrates to obtain clean surfaces are crucial to two-dimensional layer-by-layer growth and suppression of generation of stacking faults. The surface oxide layers of epiready GaAs substrates before and after chemical etching using a NH4OH-based solution are carefully characterized by angle-resolved x-ray photoelectron spectroscopy. The surface oxide layer is composed of Ga2O3 and As2O3. The chemical etching is found to reduce not only the thickness of the oxide layers but also the ratio of Ga2O3 to As2O3 to about half of that before etching. A clean GaAs (001) surface typically characterized by a (4×1) reconstruction is obtained in the present case after thermal cleaning. Prior to ZnSe growth Zn preexposure is carried out. Reflection high-energy electron diffraction intensity oscillations with more than 50 periods are observed even from the beginning of ZnSe growth on such cleaned GaAs substrates. High quality ZnSe layers with a stacking fault density of low-105 cm−2 range are grown.