Abstract
Vanadium oxide thin films were deposited on ordinary glass substrates by direct current (DC) magnetron sputtering from a vanadium metal target and subsequent reduction annealing. The deposition and annealing parameters were given in detail. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM). The phase transition of the film was observed by measuring its resistance-temperature (R-T) characteristic curve. The results indicated that the film fabricated had a semiconductor-metal phase transition temperature of about 52°C, which is 16°C lower than the common phase transition temperature of vanadium dioxide film.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
