Abstract
Bi2Te3 thin films were deposited onto polyamide sheets with direct current (DC) or radio frequency (RF) magnetron sputtering techniques. The films were prepared using a Bi2Te3 target at a varying pre-heating temperature from 150 to 350 °C. It was observed that the type of plasma excitation and pre-heating temperature can significantly change the composition, preferred orientation, crystallinity, and thermoelectric properties of the films. The pre-heat treatment significantly affected the non-stoichiometric composition. In addition, it was shown that crystallinity and (0 0 l) planes were enhanced in the DC sputtered coatings at a high pre-heating temperature. The maximum power factor of 3.5 × 10−3 W/m K2 at 285 °C was obtained for the films deposited using DC magnetron sputtering and a pre-heating temperature of 350 °C. The carrier concentration and mobility of the film were 5.40 × 1020 cm−3 and 13.04 cm2/V s, respectively. Compared with an ordinary Bi2Te3 film, the power factor of such film has been greatly increased. The results indicated that DC magnetron sputtering can enhance the (0 0l ) plane orientation in the Bi2Te3 film.
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