Abstract
Conductive and transparent indium tin oxide (ITO) films with a thickness of 100 nm were deposited onto glasses and Si(100) wafers by direct current (DC) and radio frequency (RF) magnetron sputtering. The formation and the annealing effect of films were studied by the measurements of resistivity, optical-transmission, X-ray diffraction and scanning tunneling microscopy (STM). Experimental studies indicated those films deposited by DC sputtering in a 1% O2 in an O2/Ar gas mixture, without annealing, have the lowest resistivity and the highest transmission. In addition, the films deposited by RF sputtering in a 3% O2 in an O2/Ar gas mixture, with annealing in air at 300°C for 2 h, have better resistivity and transmission.
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