Abstract
A new poly-Si TFT called ‘the buried channel poly-Si TFT (BCTFT)’ with four-terminals has been proposed and fabricated. The BCTFT exhibits performance superior to the conventional poly-Si TFT in on-current and field effect mobility due to moderate doping at the buried channel. The off-state leakage current is reduced to the level of conventional poly-Si TFT leakage currents due to the suppression of drift carriers by junction depletion between the moderately doped buried channel and the counter-doped body region. We have fabricated a 23-stage CMOS inverter chain (ring oscillator) in order to examine the dynamic characteristics of the BCTFT. The oscillation frequency of the CMOS inverter chain with a BCTFT is much higher than that of conventional poly-Si TFTs due to high on-current and device mobility.
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