Fabrication of SOI substrates with ultra-thin Si layers

Abstract

A simple technique for the fabrication of ultra-thin silicon-on-insulator (SOI) substrates is presented. The bond-and-etch-back technique utilising an SixGe1–x etch stop has been combined with the thin film separation by hydrogen implantation approach, and SOI substrates with ultra-thin (< 5 nm) Si layers have been successfully fabricated.