Abstract
Focussed ion beam (FIB) processing has been applied to the fabrication of novel InP-based cleaved coupled cavity (CCC) quantum cascade lasers (QCL). Gas assisted etching using XeF2 has been shown to significantly reduce the redeposition of sputtered material onto the mirror surfaces during final milling. For the unprocessed laser a broad spread of lasing peaks are observed between 9.72µm to 9.78µm at a current of 380mA (1kA/cm−2). After FIB processing, substantial side mode suppression is observed on applying a current of 20mA (100A/cm−2) to the short section and the main lasing peak is observed at 9.77µm.
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