Abstract
In this study, slice-type GaN-based light-emitting diodes (µ-slice LEDs) scaled down to a few micrometers using focused ion beam (FIB) process were demonstrated. Electroluminescence peak wavelengths (λp) of the single µ-slice LEDs were nearly independent of driving current density due to the fact that the effects of joule heating and band filling on the shift of λp compete with each other. The smaller full width of half maximum of electroluminescence peaks observed from the µ-slice LEDs could result from the effect of strain release after the FIB process and thermal annealing during the FIB process on sliced structures.
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