Abstract

This study proposes the 3 D micro-fabrication method on single crystal silicon using a focused ion beam (FIB) process with masking effect for chemical etching. It could be seen that the area processed by FIB remains though it was etched by KOH solution. The dependence of the masking effect on experimental conditions and its mechanism were studied by various parameters and structural analysis respectively. Some attempts to fabricate 3 D micro-structures were made based on these results. Subsequently, the costs can be decreased to fabricate 3 D micro-structure and the process be simplified compared to that using a traditional photoresist-masking method, owing to the simple sequential processes of the chemical etching followed by FIB process.

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