Abstract
NbN tunnel junctions with a magnetic barrier, NiO x , were fabricated using dc and rf sputtering deposition. It is found that the Josephson current is severely suppressed without applying external magnetic field. Three kinds of junctions were fabricated with the structure, NbN/NiO x /NbN and NbN/NiO x /AlN/NbN. In the former type junctions, the magnetic barrier, NiO x , was formed by thermal oxidation or was deposited by sputtering a NiO target. The junctions show a nonlinear I– V characteristics and a low junction resistance. It can work as a moderately good mixer near 1 THz. They will be promising junctions in constructing a submillimeter imaging mixer array.
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