Abstract
We fabricated Nb-based superconducting tunneling junctions (STJs) with a structure of Nb/Al–AlOx/NiOx/AlOx/Al/Nb on silicon substrates, having NiOx as a magnetic barrier, for use in X-ray detectors. In the STJs with Ni deposited onto oxidized Al, the subgap leak current was observed to be large, which probably is the result of the island-growth of Ni on the AlOx. On the other hand, in the junctions with Ni deposited on the metallic Al layer and oxidized together with the Al layer below, the current–voltage characteristics of a sharp gap structure were obtained. The magnitude of dc Josephson current (Ic) for all these junctions was suppressed to ∼5% of the magnitude theoretically predicted by the Ambegaokar–Baratoff relation.
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