Fabrication of nanostructures by selective growth of C 60 and Si on Si(1 1 1) substrate

Abstract

Using two types of selective growth, selective C 60 growth and selective Si growth, on a common Si(1 1 1) substrate, an array of C 60 nanoribbons with controlled values of width and thickness is fabricated. On a surface that has Si(1 1 1)√3 × √3 R30°–Ag (referred to as Si(1 1 1)√3–Ag hereafter) and bare Si(1 1 1) regions at the same time, the preferential growth of C 60 multilayered film is recognized on the Si(1 1 1)√3–Ag region. The growth of Si selectively occurs on a bare Si(1 1 1) region if the substrate surface has C 60-adsorbed and bare Si(1 1 1) regions at the same time. As a demonstration of the use of these selective growths, we fabricate an array of well-isolated C 60 nanoribbons, which show a well-ordered molecular arrangement and have sizes of about 40 nm in widths and 3–4 nm in thicknesses.