Abstract
The technique of thermal vacuum deposition of Ge onto GaAs substrates has been used for obtaining nanocrystalline Ge films. Nanocrystalline character of the films is confirmed by atomic force microscopy of their surface and by the data of Raman light scattering. The most probable size of the nanocrystallites forming the films decreases monotonically with decreasing their thickness. And raise of the deposition temperature results in their enlargement. Electro conductivity of such films proves to be high enough (resistivity of 1-10 Ohm cm at room temperature) and has character of variable range hopping conduction of the Mott's type. The hops, presumably, take place through the localized states connected with the grain boundaries.
Highlights
Thermal vacuum deposition of Ge films onto GaAs substrates were studied widely in the sixties for the purpose of use them in electronics
Different regimes of the film deposition have been studied and those of them which result in nanocrystalline Ge films have been found
At low deposition temperature (350°С), Ge film turns out to be amorphous as it follows from style of the curve for sample #3 in the form of diffuse peak
Summary
Thermal vacuum deposition of Ge films onto GaAs substrates were studied widely in the sixties (see, for example, [1]) for the purpose of use them in electronics. A new field of science has appeared, in the framework of which polycrystalline (more exactly nanocrystalline) character of the Ge film is right desirable property. It is important that these films should have high enough electro conduction that would allow obtaining active light emitting devices thereupon. In this connection, we report here about using this simple and low-cost method for deposition of Ge onto substrates of (100)GaAs and (111)Si. Different regimes of the film deposition have been studied and those of them which result in nanocrystalline Ge films have been found. Structural (by means of Raman spectroscopy and atomic force microscopy) and electric properties of such films have been investigated
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