Fabrication of n-ZnO:Al∕p-SiC(4H) heterojunction light-emitting diodes by filtered cathodic vacuum arc technique

Abstract

We report the low-temperature (∼150°C) fabrication of n-ZnO:Al∕p-SiC(4H) heterojunction light-emitting diodes by filtered cathodic vacuum arc technique. Diodelike rectifying current-voltage characteristics, with turn-on voltage of ∼3.8V and low reverse leakage current of <10−2μA, were measured at room temperature. In addition, ultraviolet emission with peak wavelength of ∼385nm and full width at half maximum of ∼20nm are observed at a forward biased voltage of ∼7.4V. The ultraviolet electroluminescence from the heterojunction is originated from the exciton-exciton scattering inside the n-ZnO:Al film.