Fabrication of high-performance voltage inverters based on carbon nanotube field-effect transistors

Abstract

We demonstrated high-performance complementary voltage inverters based on top-gated carbon nanotube field-effect transistors (CNTFETs) with SiN <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> passivation films. The carrier type of CNTFETs was controlled by forming condition of SiN <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> passivation films. Complementary voltage inverters comprising p- and n-type CNTFETs were fabricated on the same SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> substrate. The static transfer and noise margin characteristics of the CNTFET based inverters were investigated. It was found that a gain of approximately 24 was achieved and that the device was robust against noise.