Complementary voltage inverters with large noise margin based on carbon nanotube field-effect transistors with SiNx top-gate insulators

Abstract

Complementary voltage inverters based on top-gated carbon nanotube field-effect transistors (CNTFETs) were fabricated with SiNx top-gate insulators. The SiNx passivation films were deposited by catalytic chemical vapor deposition, and the carrier type of the CNTFETs was controlled by the conditions used to form the passivation film. Air-stable complementary voltage inverters incorporating p- and n-type CNTFETs were then fabricated on the same SiO2 substrate. The static transfer and noise margin characteristics of the CNTFET-based inverters were investigated. A high gain of 24 at an input voltage of 0.49 V and a large noise margin equal to 80% of half the supply voltage were achieved. This approach is a useful technique for fabricating integrated logic devices and circuits based on CNTFETs.